SAMSUNG 860 EVO Series MO-300 SSD, mSATA - 500 GB

In addition, the Samsung 860 EVO series has a higher compatibility, is more versatile and up to eight times more robust than its predecessor. Samsung has also put this technique in the form factor MO-300, which is even smaller than M.2. The M-300 memory cards are mainly intended for notebooks and motherboards with a small form factor, such as Mini-ITX.

The Samsung 860 EVO MO-300 at a glance
– Advanced TLC V-NAND technology with 64 layers
– Strong performance with max. 550/520 MB / s read / write
– Intelligent TurboWrite write buffer for maximum write performance
– Storage with 500 GB capacity
– 98,000 / 90,000 IOPS Random Read / Write
– Compact M-300 format

Fast, reliable and proven technologies – the Samsung SSD 860 EVO
The Samsung 850 Series drives have long been a standard recommendation for purchasing an SSD. Good price, the highest possible system stability, reliability and compatibility, as well as maximum read, write and access performance – these are the attributes Samsungs Solid State Drives are known for all over the world.

Each of these features is mainly due to the fact that Koreans develop all aspects and components of flash memory media in-house, from the memory cells to the controller and firmware to the SDRAM cache. With the 860 EVO Samsung has further developed its own Flash technology and a very attractive entry-level SSD on offer.

The 860 EVO represents the evolution, ie further development, of the previous 850 EVO or 850 PRO series, and thus continues to position itself as a performance engine under the more expensive 860 PRO. But she manages to get closer to her big sister in terms of longevity and energy consumption, and in terms of speed she is almost equal to her professional counterpart.
Higher performance with lower energy consumption
So writes the 860 EVO with max. 520 MB / s and reads at up to 550 MB / s on the theoretical limit of the mSATA interface. The newly developed MJX controller with refined error correction can further reduce power consumption even further. All these improvements are made possible by the innovative 3D V-NAND TLC memory cells.

Instead of just shrinking the cell structure of the flash memory chips (called NAND) for a higher cell density, Samsung stacked the transistors vertically one above the other in 64 layers, thus achieving a significantly higher storage density. More parallel TLC flash cells always result in higher speeds and can work more efficiently.

The resulting doubling of shelf life is passed on directly to the buyer and goes along with the usual generous warranty conditions of 5 years or when the TBW reaches a whopping 300 terabytes.

Technical details:
– Dimensions: 51 x 3.85 x 30 mm (W x H x D)
– Form factor: MO-300
– Weight: about 5 g
– Capacity: 500 GB
– Controller: Samsung MJX
– Cache: 512 MB LPDDR4
– NAND: 3-bit TLC V-NAND (64 layers, triple-level cell)
– Connection: mSATA
Power:
– Reading: max. 550 MB / s
– Write: max. 520 MB / s
– IOPS (4KB Random Read): 98,000
– IOPS (4KB Random Write): 90,000
– Compatibility (Features): TRIM, S.M.A.R.T.
– Average life expectancy: 1.5 million h
– TBW: 300 TB
– Operating temperature: 0 to 70 degrees C
– Shock resistant up to: 1,500 G
– Manufacturers warranty: 5 years
– Compatibility (operating system): Windows 10, 8, 7 (each 32 / 64bit), Mac OS X 10, Linux from kernel 3.8