SAMSUNG 870 EVO 2.5 inch SSD, SATA 6G - 1 TB

With the 870 EVO, Samsung is offering V-NAND 3-bit MLC SSDs in 2.5-inch format.

Samsung
  • SKU: SSSS-179
  • MPN: MZ-77E1T0B/EU
  • EAN: 8806090545917
  • Warranty: 12 Months
This product is now End of Life
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With the 870 EVO, Samsung is offering V-NAND 3-bit MLC SSDs in 2.5-inch format.

Details

The flash drives are connected to the PC via the SATA interface and offer high read and write speeds at an attractive price-performance ratio. This makes them an excellent choice for users with high storage requirements who want to access their data quickly.

The features of the Samsung 870 EVO MLC-SSD at a glance:
– Advanced 3-bit MLC V-NAND
– Strong performance with max. 560/530 MB / s read / write
– Intelligent TurboWrite write buffer for maximum write performance
– -Storage space with 1 TB capacity
 – 98,000 / 88,000 IOPS random read / write
– Compact 2.5-inch format

Samsung 870 EVO: Fast SATA SSD with 2 TB storage space
The 870 EVO writes with a maximum of 530 MB / s and reads with up to 560 MB / s at the theoretical limit of the SATA-6G interface. The MKX controller newly developed for the 870 EVO with refined error correction can also reduce power consumption even further. All of these improvements are made possible primarily by the innovative V-NAND 3-bit MLC memory cells.

Samsung continues to reserve a certain area of the memory cells in the 870 EVO as a TurboWrite buffer, in addition to the 1 GB LPDDR4 cache that is already available. Of course, the Samsung 870 EVO also has a SATA 6G interface for rapid data transfer and, thanks to its low height of just 6.8 mm, can be accommodated in all conceivable environments. With the Magician software, Samsung also offers an excellent maintenance and data migration tool.

Technical details:
– Dimensions: 69.85 x 6.8 x 100 mm (W x H x D)
– Weight: approx. 45 g
– Capacity: 1 TB
– Controller: Samsung MKX
-Cache: Samsung 1 GB low-power DDR4 SDRAM
 -NAND: Samsung V-NAND 3-bit MLC
– Connection: SATA 6G
– Power:
– Read: max. 560 MB / s
 -Write: max. 530 MB / s
– IOPS (4KB Random Read): 98,000
– IOPS (4KB Random Write): 88,000
– Compatibility (Features): TRIM, S.M.A.R.T.
– Average life expectancy: 1.5 million h
– Application temperature: 0 to 70 degrees C
– Shock resistance: up to 1,500 G
– Operating voltage: 5 V
– Power consumption: 2.5 W / 4.0 W (average / maximum)
– Manufacturer warranty: 5 years or 600 TB TBW (Total Bytes Written)

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