Samsung 990 PRO PCIe 4.0 NVMe M.2 1TB [MZ-V9P1T0BW]

- 1TB capacity, 1GB DDR4 cache
- Optimized controller Samsung Pascal
- Maximum read speed of 7,450 MB/s
- Maximum write speed of 6,900MB/s
- Maximum IOPS reading: 1.2 million and writing: 1.55 million.
- MTBF: 1.5 million hours Manufacturer's warranty: 5 years or 600 TBW (TB Written)
- M.2 NVMe PCIe 4.0 SSD with incredible read and write speeds

In conjunction with the built-in 3D NAND MLC from Samsung, the 1 TB SSD of the 990 PRO series from Samsung achieves an enormous 7,450 MB/s reading and 6,900 MB/s writing as well as fantastic IOPS values of 1,200,000 in 4KB read or 1,550,000 in 4KB write. There is also 1 GB of onboard DDR4 cache. Even on PCIe 3.0 systems, this M.2 NMVe storage bar is even faster than M.2 NVMe PCIe 3.0 SSDs.

The Pascal controller from Samsung supports four standard 4.0 PCI Express lanes, which make a theoretical maximum of around 8,000 MB/s possible! Internally, the controller is connected to the flash memory with eight lanes. Thanks to these properties, the SSD is also compatible with the Playstation 5.

High efficiency V-NAND 3-bit MLC with 176 layers
With the NAND memory of the 990 PRO, the memory cells are stacked in several layers. On the one hand, this enables larger amounts of memory with higher reading and writing speeds with a smaller area of the memory blocks, on the other hand, the service life of the memory is increased and energy efficiency is improved. With the 990 PRO with a total capacity of 1 TB, the memory is only equipped on one side and is equipped with an efficient heat spreader, which means that it has increased compatibility and can be installed in many notebooks.

The Pascal controller supports the promising NVMe 2.0 protocol, LDPC error correction, wear leveling and over-provisioning to increase durability. This allows Samsung to guarantee a MTBF (Mean Time Before Failure) of at least 1.5 million hours and offer a warranty of 5 years or 600 TBW.

Technical details:
- Dimensions: 22 x 2.3 x 80 mm (W x H x D)
- Format and interface: M.2/M-Key 2280 (PCIe 4.0 x4, NVMe 2.0)
- Capacity: 1TB
- Cache: 1GB (DDR4 SCRAM)
- Controller: Samsung Pascal
- NAND: V-NAND 3-bit MLC, Samsung, 176 layers
- Performance (PCIe 4.0):
- Read: max. 7,450 MB/s
- Write: 6,900 MB/s max
- IOPS (4KB Random Read, QD32): 1,200,000
- IOPS (4KB Random Write, QD32): 1,550,000
- Power Consumption (Maximum / Operating / Idle): 7.8 / 5.4 / 0.05 W
- Compatibility (Features): NVMe 2.0, TRIM, S.M.A.R.T., 256 Bit AES, TCG/Opal 2.0, IEEE 1667 (Encrypted Drive), Garbage Collection, - Dynamic Thermal Guard, DevSlp, LDPC error correction, Wear Leveling and Over-Provisioning
- Average life expectancy: 1.5 million hours
- Guaranteed Write Volume (TBW): 600 terabytes
- Application temperature: 0 to 70 °C