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SAMSUNG 960 EVO NVE SSD, PCIe 3.0 M.2 Type 2280 - 500 GB [MZ-V6E500BW]

SAMSUNG 960 EVO NVE SSD, PCIe 3.0 M.2 Type 2280 - 500 GB
SAMSUNG 960 EVO NVE SSD, PCIe 3.0 M.2 Type 2280 - 500 GB
SAMSUNG 960 EVO NVE SSD, PCIe 3.0 M.2 Type 2280 - 500 GB
SAMSUNG 960 EVO NVE SSD, PCIe 3.0 M.2 Type 2280 - 500 GB

Overview

With the 960 SSD series, Samsung once again breaks all previous speed records and consolidates its place as the undisputed market leader in the field of flash-based solid state drives. The reason for this is not least the technical superiority of the Samsung SSDs, first and foremost this Samsung 960 EVO in M.2 format with 500 GB capacity, with stacked 48-layer TLC memory cells (called V-NAND), fast-paced PCI Express -3.0 link with 4 lanes and support for the ultra-modern NVM Express protocol.

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SKU: CB10SSSS-113
MPN: MZ-V6E500BW
EAN: 8806088540122
Warranty: 12 Months

This product is currently out of stock or EOL, please contact us for an ETA.

Details

The Samsung 960 EVO M.2-NVMe-PCIe-SSD at a glance:

    Modern M.2 NVMe PCIe SSD with 500 GB capacity
    Extreme fast 3,200 / 1,800 MB / s when reading / writing
    A total of 330,000 / 330,000 IOPS 4KB Random Read / Write
    Samsung Polaris Controller & Samsung TLC V-NAND (48 Layer)
    Guaranteed writing volume (TBW): 200 TB (up to then 3 years manufacturing guarantee)

Only in the M.2 format because of fast PCIe 3.0 x4 connection

Samsung's 960s SSD series will only appear in M.2 format, type 2280 (22 mm width, 80 mm length), and is connected via PCI Express 3.0 with 4 data lines. The classic 2.5-inch format has thus served as its comparatively slow SATA-6G interface can no longer keep up with the explosive performance of modern SSDs due to a serious bandwidth limitation (maximum net data rate of around 550 MB / s). If you want to benefit from the enormous speed potential of the Samsung 960 EVO, you need to upgrade to a PCI Express adapter card, which can be found at any time in the caseking shop.

Highly efficient 3D V-NAND with 48 layers

In the 3D V-NAND memory (or only V-NAND) of the Samsung 960 EVO, the memory cells are cylindrically stacked in several layers on top of each other. This makes possible on the one hand larger amounts of memory with a higher reading and writing speed with a smaller area of the memory blocks; on the other hand, the life of the memory is increased and the energy efficiency is improved. Compared to the predecessor series, the Samsung 960 SSDs now have 48 rather than 32 layers, bringing for the first time the highly developed technology of the Samsung SM961 SSDs from the OEM area into the end customer market.

M.2 NVE PCIe SSD with brakial read and write speed


The new Samsung "Polaris" controller of this hyperscale drive supports four PCI Express lanes of the standard 3.0, which makes a theoretical maximum of about 3.900 MB / s possible! In conjunction with the Samsung TLC-V-NAND, the 500GB version of the Samsung SSD 960 EVO achieves an enormous 3,200 MB / s when reading and 1,800 MB / s when writing, as well as fantastic IOPS values of 330,000 in the 4KB read or 330,000 in the 4KB Write. The modern "Polaris" controller chip also ensures less waste heat and thus prevents power throttling due to excessively high temperatures.

Support for the NVM Express protocol for PCIe SSDs


In addition, this Samsung SSD 960 EVO also supports the NVM Express protocol (NVME), which has been specially developed for modern PCI Express SSDs. This replaces the old AHCI protocol, which originates from the time before the general distribution of SSDs and is not optimized for highly parallelized data carrier accesses. NVMe provides for significantly lower latencies, as well as multiple and deeper command queues, which result in significantly more performance for non-linear transfers such as 4K read / write.

Technical details:

    Dimensions: 22 x 2.29 x 80 mm (W x H x D)
    Format & Interface: M.2 / M-Key 2280 (PCIe 3.0 x4, NVMe 1.1)
    Weight: 9 g
    Capacity: 500 GB
    Cache: 512 MB LPDDR3-1866
    Controller: Samsung Polaris
    NAND: Samsung TLC 3D V-NAND (Triple-Level Cell with 48 Layers)
    Performance (PCIe 3.0):
    Reading: max. 3,200 MB / s
    Write: max. 1,800 MB / s
    IOPS (4KB random read): 330,000
    IOPS (4KB random write): 330,000
    Power consumption (idle / operation): 1.2 / 5.4 W
    Compatibility (Features): NVMe 1.1, TRIM, S.M.A.R.T., 256bit AES, NCQ, Garbage Collection, TCG Opal 2.0 by future firmware update
    Average life expectancy: 1.5 million h
    Guaranteed writing volume (TBW): 200 terabytes (as long as 3 years manufacturing warranty)
    Application temperature: 0 to 70 ° C
    Shock resistant up to: 1,500 G

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SAMSUNG 960 EVO NVE SSD, PCIe 3.0 M.2 Type 2280 - 500 GB
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