SAMSUNG PM981 NVMe SSD, PCIe M.2 Type 2280, bulk - 256 GB [MZVLB256HAHQ]

The reason for this is not least the technical superiority of the Samsung SSDs, especially this Samsung PM981 in the M.2 format with 256 GB capacity, which is stacked with multi-layer MLC memory cells - called V-NAND -, extremely fast PCI Express. 3.0 connection with 4 lanes and support for the state-of-the-art NVM Express protocol.

The Samsung PM981 M.2 NVMe PCIe SSD at a glance:
- Modern M.2 NVMe PCIe SSD with 256 GB capacity
- Extreme fast 2,800 / 1,100 MB / s read / write
- Total 250,000 / 180,000 IOPS 4KB Random Read / Write
- Samsung Phoenix Controller & Samsung 3-Bit MLC V-NAND
- Lifetime (MTBF): 1.5 million hours

Exclusively in M.2 format due to rapid PCIe 3.0 x4 connection
For the first time, Samsung's PM981er SSD series will only be available in M.2 format, 2280 mm (22 mm wide, 80 mm long), and will be connected via PCI Express 3.0 with 4 data lines. The classic 2.5-inch format has thus had its day, since its comparatively slow SATA-6G interface can no longer compete with the explosive performance increase of modern SSDs due to a severe bandwidth limitation (maximum net data rate of around 550 MB / s). If you want to benefit from the enormous speed potential of the Samsung PM981, you must upgrade in case of doubt or use a PCI Express adapter card, which of course can be found at any time via the search function in the Caseking shop.

Highly efficient 3-bit MLC 3D V-NAND
In the 3D V-NAND memory (or only V-NAND) of the Samsung PM981, the memory cells are cylindrically stacked in several layers. As a result, on the one hand, larger storage volumes with a higher reading and writing speed are possible with a smaller area of the storage blocks, on the other hand the service life of the storage is increased and the energy efficiency is improved.

M.2 NVMe PCIe SSD with brute read and write speed
The new Samsung "Phoenix" controller of this hyper-fast drive supports four standard PCI Express lanes of the standard 3.0, which make a theoretical maximum of about 3,900 MB / s possible! In conjunction with the built-in Samsung 3-bit MLC V-NAND, the 512GB version of the Samsung PM981 reaches 2,800 MB / s read and 1,100 MB / s write, as well as IOPS values of 220,000 in 4KB read and 180,000 respectively in 4KB Write. The modern "Phoenix" controller chip also ensures less waste heat and thus comes before a performance throttling due to high temperatures before.

Support for the NVM Express protocol for PCIe SSDs
In addition, this Samsung SSD PM981 also supports the NVM Express protocol (NVMe for short), which has been specially developed for modern PCI Express SSDs. This replaces the old AHCI protocol, which dates back to before the widespread adoption of SSDs and is not optimized for highly parallelized disk accesses. NVMe provides significantly lower latencies, as well as multiple and lower command queues, which translate into significantly more performance in non-linear transfers such as 4K read / write.

Technical details:
- Dimensions: 22 x 2.38 x 80 mm (W x H x D)
- Format & Interface: M.2 / M-Key 2280 (PCIe 3.0 x4, NVMe 1.1)
- Weight: 9 g
- Capacity: 256 GB
- Controller: Samsung Phoenix
- NAND: Samsung 3-bit MLC 3D V-NAND
Performance (PCIe 3.0):
- Reading: max. 2,500 MB / s
- Write: max. 1,100 MB / s
- IOPS (4KB Random Read): 220,000
- IOPS (4KB Random Write): 180,000
- Power consumption (idle / operation): 0.03 / 5.9 W
- Compatibility (Features): NVMe 1.2a, TRIM, S.M.A.R.T., NCQ, Garbage Collection, TCG Opal 2.0, hardware-based AES-XTS 256-bit encryption
- Average life expectancy: 1.5 million h
- Operating temperature: 0 to 70 ° C
- Shock resistant up to: 1,500 G
- Manufacturer's warranty: 3 years